High performance GaN pin rectifiers grown on free-standing GaN substrates
High performance GaN pin rectifiers grown on free-standing GaN substrates
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DOI：
10.1049/el:20062261
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发表时间：
2006-10
影响因子：
1.1
通讯作者：
J. Limb;D. Yoo;J. Ryou;Wonseok Lee;S. Shen;R. Dupuis
中科院分区：
文献类型：
--
作者：
J. Limb;D. Yoo;J. Ryou;Wonseok Lee;S. Shen;R. Dupuis
Gallium nitride pin rectifiers grown on bulk GaN substrate have been fabricated and characterised. The device structures were grown by metal organic chemical vapour deposition (MOCVD) on free-standing GaN substrates. The diode structure consisted of an n+-GaN layer, followed by a 2.5 µm unintentionally doped i-GaN layer, and a p-type GaN layer capped with a p++-GaN cap layer. The mesa-structure pin diodes exhibited a blocking voltage as large as Vr∼−540 V, and a reverse current density of Ir∼0.1 A/cm2 at Vr∼−500 V. The forward voltage drop is only 4.4 V at a forward current density of ∼100A/cm2, with an on-resistance of 3 mΩ · cm2 for a circular device with an 80 µm mesa diameter. The breakdown voltage and on-resistance are believed to be the best values reported for vertical mesa GaN pin rectifiers grown on bulk GaN substrates with comparable i-layer thickness.
