LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ALN OVER SAPPHIRE SUBSTRATES
LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ALN OVER SAPPHIRE SUBSTRATES
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DOI：
10.1063/1.108144
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发表时间：
1992-11-23
影响因子：
4
通讯作者：
CHOYKE, WJ
中科院分区：
文献类型：
--
作者：
KHAN, MA;KUZNIA, JN;CHOYKE, WJ
在这封信中，我们报告了高品质的AlN单晶薄膜的基底平面蓝宝石衬底上的沉积。一个传统的低压金属有机化学气相沉积（LPMOCVD）系统被用于所有的增长在这里报道。我们提出了常规和开关原子层外延（销售）沉积的结果。传统的LPMOCVD在超过750摄氏度的温度下产生单晶AlN薄膜。相比之下，ALE工艺在低至450摄氏度的温度下生产出非常光滑的单晶AlN层。据我们所知，这是有史以来报道的单晶AlN化学气相沉积的最低值。X射线和光学表征数据，比较两种沉积技术所产生的材料的质量。
In this letter we report the deposition of high quality single-crystal films of AIN over basal plane sapphire substrates. A conventional low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for all the growths reported here. We present the results of conventional and switched atomic layer epitaxial (SALE) depositions. Conventional LPMOCVD yielded single-crystal AIN films at temperatures in excess of 750-degrees-C. The ALE process in contrast produced extremely smooth single-crystal AIN layers at temperatures as low as 450-degrees-C. To the best of our knowledge this is the lowest ever reported for chemical vapor deposition of single-crystal AIN. X-ray and optical characterization data are presented to compare the quality of the material resulting from the two deposition techniques.