Status and prospects for SiC power MOSFETs
Status and prospects for SiC power MOSFETs
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DOI：
10.1109/16.992876
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发表时间：
2002-04-01
影响因子：
3.1
通讯作者：
Palmour, JW
中科院分区：
文献类型：
--
作者：
Cooper, JA;Melloch, MR;Palmour, JW
SiC电子器件技术在过去的十年中取得了迅速的发展。在本文中，我们回顾了1992年至今SiC功率MOSFET的发展，讨论了器件开发的现状，确定了关键的制造问题，并评估了持续进展和最终商业化的前景。
SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.