Proposal for Ultra-Compact Silicon-on-Insulator Waveguide Polarization Converter
Proposal for Ultra-Compact Silicon-on-Insulator Waveguide Polarization Converter
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DOI：
10.1109/lpt.2013.2295796
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发表时间：
2014-03
影响因子：
2.6
通讯作者：
W. Xu;W. Ye;X. Yuan;Z. Zhu;Q. Lu
中科院分区：
文献类型：
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作者：
W. Xu;W. Ye;X. Yuan;Z. Zhu;Q. Lu
我们提出了一种非对称硅-等离子体混合波导，它支持两种具有类线偏振电场分布且传播常数差异较大的本征模式。利用混合波导的这些模式特性，设计了一种基于多模干涉的超紧凑、高性能绝缘体上硅（SOI）波导偏振转换器，将准TE偏振模式转换为准TM偏振模式。仿真结果表明，在610 nm的超短转换长度下，偏振消光比高达27 dB。对于大于 20 dB 的消光比，带宽为 140 nm。这种非对称硅-等离子体混合波导可能为进一步最小化 SOI 平台上的集成光路开辟广阔的前景。
We propose an asymmetric silicon-plasmonic hybrid waveguide, which supports two eigen modes with linearly polarized-like electric field distributions and large difference between their propagation constants. Exploiting these mode characteristics of the hybrid waveguide, an ultra-compact and high-performance silicon-on-insulator (SOI) waveguide polarization converter based on multimode interference is designed, which converts quasi-TE polarization mode to quasi-TM polarization mode. Simulation results show that polarization extinction ratio up to 27 dB is reached for an ultra-short conversion length of 610 nm. The bandwidth is 140 nm for an extinction ratio larger than 20 dB. This asymmetric silicon-plasmonic hybrid waveguide may open promising prospects for further minimizing integrated optical circuits on SOI platform.