Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C
Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C
复制标题
具有 5 µm 栅漏间距的 GaN-on-Si 高电子迁移率晶体管在 200 V 和 200 °C 的创纪录漏极电压下进行断态测试，具有出色的稳定性
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
G. Borghs
中科院分区：
文献类型：
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作者：
D. Marcon;M. V. Hove;D. Visalli;J. Derluyn;J. Das;F. Medjdoub;S. Degroote;M. Leys;K. Cheng;R. Mertens;M. Germain;G. Borghs
在200 °C的环境温度下，在高达200 V的漏极电压下，对AlGaN/GaN高电子迁移率晶体管（HEMTs）在夹断条件下施加200小时的电应力。测试晶体管生长和加工在4英寸。硅衬底显示出可忽略的退化。这证明了高质量AlGaN/GaN/AlGaN双异质结构、原位Si 3 N4沉积技术和精确优化的栅极技术的组合在恶劣条件下产生了优异的器件稳定性。
AlGaN/GaN high electron mobility transistors (HEMTs) were electrically stressed in pinch-off condition at a drain voltage up to 200 V for 200 h at an ambient temperature of 200 °C. The tested transistors which were grown and processed on 4-in. silicon substrate showed negligible degradation. This proves that a combination of a high quality AlGaN/GaN/AlGaN double heterostructure, the in-situ Si3N4 deposition technique and an accurately optimized gate technology result in excellent device stability under harsh conditions.