Nanofabricated Three Dimensional Photonic Crystals Operating at Optical Wavelengths

Nanofabricated Three Dimensional Photonic Crystals Operating at Optical Wavelengths
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在光波长下工作的纳米制造三维光子晶体

DOI:
10.1088/0031-8949/1996/t68/002
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发表时间:
1996
期刊:
影响因子:
--
通讯作者:
E. Yablonovitch
E. Yablonovitch
中科院分区:
--
文献类型:
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作者:
Chuan;V. Arbet;A. Scherer;E. Yablonovitch

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我们描述了第一个具有禁带的三维光子晶体的纳米结构,禁带位于电磁波谱的近红外区,1.1 μm < λ < 1.5 μm,刚好超出GaAs的电子带边。我们制作这些结构的化学辅助离子束蚀刻通过一个三角形孔阵列掩模,定义由电子束光刻GaAs。通过二维光刻控制三维空间周期性,实现了三维禁带的光谱调谐。在厘米尺度模型上,光学传输谱通常与微波频率传输非常一致。然而,我们发现,中间间隙的光学反射率是令人惊讶的敏感的光子晶体中的结构错误,降低光学抑制从预期的95%到观察到的80%。我们认为,在最脆弱的k-空间方向,而不是整体厚度的中间间隙衰减,是相关的品质因数的纳米尺度光子晶体。
We describe the nanofabrication of the first three-dimensional (3-d) photonic crystals with a forbidden photonic bandgap lying in the near infrared region of the electromagnetic spectrum, 1.1 μm < λ < 1.5 μm, just beyond the electronic band-edge of GaAs. We fabricated these structures by chemically assisted ion beam etching through a triangular hole array mask, defined by electron beam lithography on GaAs. The 3-d forbidden photonic bandgap was spectrally tuned by 2-d lithographic control of the 3-d spatial periodicity. Optical transmission spectra were generally in good agreement with microwave frequency transmission on centimeter scale models. Nevertheless, we find that the mid-gap optical reflectivity is surprisingly sensitive to structural errors in the photonic crystal, degrading the optical rejection from an expected 95% to an observed 80%. We suggest that mid-gap attenuation in the most vulnerable k-space directions, rather than overall thickness, is the relevant Figure-of-Merit for nano-scale photonic crystals.