P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition
P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition
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DOI：
10.35848/1347-4065/ab9ef7
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发表时间：
2020-07
影响因子：
1.5
通讯作者：
Subaru Nakanishi;Y. Shinozaki;S. Kaneko;A. Matsuda;M. Yoshimoto
中科院分区：
文献类型：
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作者：
Subaru Nakanishi;Y. Shinozaki;S. Kaneko;A. Matsuda;M. Yoshimoto
采用脉冲激光沉积法，在1.0 × 10−5 Pa的高真空中，在SiO2玻璃衬底上制备了非晶氧化钒薄膜。薄膜的电导率从323 K时的0.34 S cm−1增加到473 K时的4.2 S cm−1，并且薄膜在323 K时显示出15 μV K−1的正塞贝克系数，在RT时显示出10 μV的正霍尔电压，表明为p型半导体。从非原位X-射线光电子能谱分析，p型非晶SiO2薄膜似乎含有少量的V4+离子与V4+/V5+的比例至少为0.2的表面。
Amorphous vanadium oxide (VxOy) thin films were grown on SiO2 glass substrates by pulsed laser deposition at RT in high vacuum of 1.0 × 10−5 Pa. The electric conductivity of the film was increased from 0.34 S cm−1 at 323 K to 4.2 S cm−1 at 473 K, and the film showed positive Seebeck coefficient of 15 μV K−1 at 323 K and positive Hall voltage of 10 μV at RT, indicating p-type semiconductor. From ex situ X-ray photoelectron spectroscopy analysis, p-type amorphous VxOy thin films seemed to contain minor V4+ ions with a V4+/V5+ ratio of at least 0.2 at the surface.