Metal Hydrides: Epitaxial Growth and Electronic Properties
Metal Hydrides: Epitaxial Growth and Electronic Properties
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DOI：
10.7566/jpsj.89.051012
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发表时间：
2020-05-15
影响因子：
1.7
通讯作者：
Hitosugi, Taro
中科院分区：
文献类型：
--
作者：
Shimizu, Ryota;Oguchi, Hiroyuki;Hitosugi, Taro
关于高压硫化氢 (H2S) 中 200K 以上温度下超导性的报道引起了人们对金属氢化物及其物理性质的极大兴趣。对于金属氢化物的基础理解和器件应用的进展，使用单晶或外延薄膜的研究至关重要。然而，迄今为止，已经制备了一些金属氢化物单晶和外延薄膜，与氧化物和氮化物相比，这些材料的基础和应用研究仍然难以捉摸。本文回顾了最近旨在建立金属氢化物外延薄膜合成技术并寻找新的金属氢化物功能的工作；它专注于金属氢化物的外延生长和特性。
Reports of superconductivity at temperatures above 200K in high-pressure hydrogen sulfide (H2S) had generated great interest in metal hydrides and their physical properties. For the progress in both fundamental understanding and device application of metal hydrides, studies using single crystals or epitaxial thin films are essential. However, to date, a few metal hydride single crystals and epitaxial thin films have been fabricated, and both fundamental and applied research on these materials remain elusive compared with oxides and nitrides. This article reviews the recent body of work that aims to establish a metal-hydride epitaxial thin film synthesis technology, and to search for new metal-hydride functionalities; it focuses on the epitaxial growth and properties of metal hydrides.