Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts
Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts
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DOI：
10.1002/adma.201001413
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发表时间：
2010-10-01
影响因子：
29.4
通讯作者：
Golberg, Dmitri
中科院分区：
文献类型：
--
作者：
Li, Liang;Fang, Xiaosheng;Golberg, Dmitri
使用光刻工艺制造单个ZrS2纳米带场效应晶体管。温度依赖性的电输运揭示了不同的工作温度区不同的导电机制。ZrS2纳米带光电探测器表现出高性能的可见光光电导。
Individual ZrS2-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS2-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.