Structural characterization of ion-implanted graphite
Structural characterization of ion-implanted graphite
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DOI：
10.1103/physrevb.25.4142
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发表时间：
1982-03
影响因子：
3.7
通讯作者：
B. Elman;M. Shayegan;M. Dresselhaus;H. Mazurek;G. Dresselhaus
中科院分区：
文献类型：
--
作者：
B. Elman;M. Shayegan;M. Dresselhaus;H. Mazurek;G. Dresselhaus
从晶格损伤和注入离子的分布两个方面对石墨的离子注入进行了表征。损伤和注入离子的深度分布都遵循先前为离子注入半导体开发的模型。拉曼光谱用于监测晶格损伤的不同方面，而俄歇光谱用于监测注入轮廓。一阶和二阶拉曼光谱都被报道为离子质量和离子能量的函数。表面损伤用扫描电子显微镜观察，非晶态背景下的微晶区用扫描电子显微镜观察。
Ion implantation of graphite is characterized with respect to lattice damage and the distribution of implanted ions. Both the depth profile of the damage and of the implanted ions are shown to follow the models previously developed for ion-implanted semiconductors. Raman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage while Auger spectroscopy is used to monitor the implantation profile. Both first- and second-order Raman spectra are reported as a function of ionic mass and ion energy. The surface damage is examined by scanning electron microscopy while the microcrystalline regions in an amorphous background are observed by scanning transmission electron microscopy.