Preparation and photocatalytic enhancement mechanism of g-C3N4/(110) facet BiVO4 heterojunction induced by electrostatic field
Preparation and photocatalytic enhancement mechanism of g-C3N4/(110) facet BiVO4 heterojunction induced by electrostatic field
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DOI：
10.1016/j.matlet.2020.129131
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发表时间：
2021-02-15
影响因子：
3
通讯作者：
Xia, Ao
中科院分区：
文献类型：
--
作者：
Dang, Mingyue;Tan, Guoqiang;Xia, Ao
通过在BiVO4(110)面上负载g-C3N4，采用光沉积法制备了g-C3N4/(110)面光催化剂。在紫外光的激发下，空穴迁移到BiVO4(110)面上，使BiVO4(110)面带正电荷。电负性的g-C3N4通过静电吸引吸附在BiVO4(110)面上，形成g-C3N4/(110)面光催化剂。由静电力和表面电势差形成的内置电场增强了界面电荷的转移和光生载流子的有效分离。异质结光催化剂的稳定光电流是BiVO4的3.1倍。更重要的是，异质结光催化剂在可见光照射下120min内的降解率是BiVO4的3.5倍。(C)2020爱思唯尔B.V.保留所有权利。
The g-C3N4/(110) facet BiVO4 heterojunction photocatalyst is fabricated by the photo-deposition method through loading g-C3N4 on the BiVO4(110) facet. After being excited by ultraviolet light, the holes migrate to the BiVO4(110) facet, making the BiVO4(110) facet positively charged. The electronegative g-C3N4 is adsorbed on the BiVO4(110) facet by electrostatic attraction, then, the g-C3N4/(110) facet BiVO4 heterojunction photocatalyst is formed. The built-in electric field formed by electrostatic force and the surface potential difference enhances the transfer of interface charges and the effective separation of photogenerated carriers. The stable photocurrent of the heterojunction photocatalyst is 3.1 times than that of BiVO4. More importantly, the degradation rate of heterojunction photocatalyst within 120 min under visible light irradiation is 3.5 times as high as that of BiVO4. (C) 2020 Elsevier B.V. All rights reserved.