Dopant-segregation-controlled ZnO single-grain-boundary varistors
Dopant-segregation-controlled ZnO single-grain-boundary varistors
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DOI：
10.1063/1.1899762
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发表时间：
2005-04
影响因子：
4
通讯作者：
Y. Sato;M. Yodogawa;Takahisa Yamamoto;N. Shibata;Y. Ikuhara
中科院分区：
文献类型：
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作者：
Y. Sato;M. Yodogawa;Takahisa Yamamoto;N. Shibata;Y. Ikuhara
采用双晶材料设计了ZnO单晶界压敏电阻器。Pr和Co掺杂剂共偏析的边界，关键是获得高的variistic属性，优化通过控制晶界取向差，因此，晶界原子结构。由此获得的单一晶界显示出足够高的变化特性。目前的结果开辟了未来纳米级电子器件所需的单晶界压敏电阻的可能性。
A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.