Characterization of activated non-evaporable porous Ti and Ti-Zr-V getter films by synchrotron radiation photoemission spectroscopy
Characterization of activated non-evaporable porous Ti and Ti-Zr-V getter films by synchrotron radiation photoemission spectroscopy
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DOI：
10.1016/j.tsf.2006.07.052
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发表时间：
2006-11-25
期刊：
影响因子：
2.1
通讯作者：
Lii, Ding-Fwu
中科院分区：
文献类型：
--
作者：
Li, Chien-Cheng;Huang, Jow-Lay;Lii, Ding-Fwu
采用直流磁控溅射的掠射角沉积方法在（100）硅基片上制备了高孔隙率的Ti和TiZrV吸杂膜，研究了其激活过程。利用同步辐射光电子能谱（SRPES）研究了活化温度对多孔Ti和TiZrV薄膜还原程度的影响。暴露在空气中的Ti膜表面上吸收的元素碳将转化为Ti碳化物相，然而，TiZrV膜表面上的元素碳将通过在250 ℃或更高温度下加热而完全去除。多孔TiZrV膜中的氧化Ti比多孔Ti膜中的氧化Ti更容易被还原。TiZrV薄膜表面的V-O键和Ti-O键比Zr-O键更容易断裂。我们认为，与氧化Ti相比，氧化TiZrV的还原温度降低是由于Zr对氧化Ti或氧化V的置换反应造成的。（c）2006 Elsevier B. V.版权所有。
Highly porous Ti and TiZrV film getters on (100) silicon substrates, grown by the glancing angle deposition of dc magnetron sputtering method, were used to study the activation process. The effect of activation temperature on the reducing degree of the porous Ti and TiZrV films were investigated by synchrotron radiation photoemission spectroscopy (SRPES). Elemental carbon absorbed on the surface of the Ti film, exposed in air, will be transformed to a Ti carbide phase, however, that which is on the surface of the TiZrV film will be completely removed by heat at 250 degrees C or above. The oxidized Ti in a porous TiZrV film is more easily reduced than that in the porous Ti films. The breakdown of V-O and Ti-O bonds on the TiZrV film surface is easier than that of the Zr-O bond. We suggest that the decrease of reducing temperature of oxidized TiZrV, comparing with that of oxidized Ti, is caused by the displacement reaction of Zr on oxidized Ti or oxidized V. (c) 2006 Elsevier B.V. All rights reserved.