Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes
Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes
复制标题
使用石墨烯电极的高性能 InSe 基光电探测器的栅极调谐
DOI：
10.1002/adom.201500190
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发表时间：
2015-10-01
影响因子：
9
通讯作者：
Wang, Kaiyou
中科院分区：
文献类型：
--
作者：
Luo, Wengang;Cao, Yufei;Wang, Kaiyou
为了提高具有高光响应度的InSe基光电探测器的响应速度，使用石墨烯作为透明电极以修改电极与InSe之间的功函数的差异。正如预期的那样，InSe/石墨烯光电探测器的响应速度下降到120 μ s，比InSe/金属器件快约40倍。它也可以通过背栅电压从310 μ s调谐到100 μ s。在响应速度快的情况下，光响应度可达60 A W-1。同时，InSe/石墨烯光电探测器在400-1000 nm处具有宽光谱范围。2D晶体/石墨烯电接触的设计对于高性能光电器件可能是重要的。
In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 mu s, which is about 40 times faster than that of an InSe/metal device. It can also be tuned by the back-gate voltage from 310 mu s down to 100 mu s. With the high response speed, the photoresponsivity can reach as high as 60 A W-1 simultaneously. Meanwhile the InSe/graphene photodetectors possess a broad spectral range at 400-1000 nm. The design of 2D crystal/graphene electrical contacts can be important for high-performance optoelectronic devices.