Cross-sectional STM study of impurity states in diluted magnetic semiconductor (Zn, Cr)Te
Cross-sectional STM study of impurity states in diluted magnetic semiconductor (Zn, Cr)Te
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稀磁半导体 (Zn, Cr)Te 中杂质态的截面 STM 研究
DOI：
10.1063/1.4848420
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
K. Kanazawa
中科院分区：
文献类型：
--
作者：
今倉 暁;杜 磊;櫻井 鉄也;石川隆行;K. Kanazawa
我们用横截面扫描隧道显微镜/能谱(STM/STS)测量了多层结构(ZZ0.97，CR0。03)Te/缓冲剂非掺杂ZnTe/衬底p-ZnTe。STS测量结果表明，(Zn，Cr)Te在带隙内的较深位置存在铬杂质态。
We performed cross-sectional scanning tunneling microscopy/spectroscopy (STM/STS) measurement on multi-layered structure (Zn0. 97, Cr0. 03) Te/buffer undoped ZnTe/substrate p-ZnTe. The result of STS measurements on (Zn, Cr) Te clearly showed the existence of Cr impurity states at a deep position within the band-gap of the host ZnTe.