Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy.
Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy.
复制标题
等离子辅助分子束外延中闪锌矿 GaN/GaAs(001) 的表面重建。
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Ploog
中科院分区：
文献类型：
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作者：
Brandt;Yang;Jenichen;Suzuki;Däweritz;Ploog
我们确定的生长条件所需的合成纯立方GaN薄膜的GaAs（001）通过等离子体辅助分子束外延。它示出，它是表面化学计量，其中支配的相组成，因此必须严格控制，以避免六方晶粒的成核。通过原位反射高能电子衍射研究静态和动态条件下锌掺杂GaN的表面重构，实现了对表面化学计量比的控制。
We identify the growth conditions required for the synthesis of purely cubic GaN films on GaAs(001) by means of plasma-assisted molecular-beam epitaxy. It is shown that it is the surface stoichiometry which governs the phase composition and which thus has to be tightly controlled in order to avoid nucleation of hexagonal grains. Such control over the surface stoichiometry is achieved by investigating the surface reconstructions of zinc-blende GaN under both static and dynamic conditions by in situ reflection high-energy electron diffraction.