Dynamics of deuterium implanted in boron coating film for wall conditioning
Dynamics of deuterium implanted in boron coating film for wall conditioning
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DOI：
10.1016/j.jnucmat.2007.03.209
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发表时间：
2007-08
影响因子：
3.1
通讯作者：
T. Nakahata;A. Yoshikawa;M. Oyaidzu;Y. Oya;Y. Ishimoto;K. Kizu;J. Yagyu;N. Ashikawa;K. Nishimura;N. Miya;K. Okuno
中科院分区：
文献类型：
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作者：
T. Nakahata;A. Yoshikawa;M. Oyaidzu;Y. Oya;Y. Ishimoto;K. Kizu;J. Yagyu;N. Ashikawa;K. Nishimura;N. Miya;K. Okuno
用二次离子质谱研究了氘注入纯硼薄膜的吸留和解吸行为。结果表明，控制氘脱附的过程依赖于温度。在第一阶段，低于573 K时，氘从B-D-B键上的解吸占主导地位，其扩散是速率控制过程。在573 K以上，氘主要从B-D键上脱附，脱附过程以复合为主。用等温退火实验测定了氘与硼的有效分子复合速率常数。
Retention and desorption behavior of deuterium implanted into pure boron films has been studied by means of the secondary ion mass spectroscopy. It was found that the process controlling deuterium desorption depended on the temperature. At stage 1, below 573K, the desorption of deuterium from B–D–B bonds dominated and its diffusion was the rate-determining process. Above 573K, deuterium was mainly desorbed from B–D bonds, and recombination was the rate-determining process. The effective molecular recombination rate constant of deuterium bound to boron associated with B–D bond was determined by an isothermal annealing experiment.