Experimental observation of ferromagnetism evolution in nanostructured semiconductor InN
Experimental observation of ferromagnetism evolution in nanostructured semiconductor InN
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DOI：
10.1039/c0jm02083d
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发表时间：
2010-11
影响因子：
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通讯作者：
B. Song;K. Zhu;Jun Liu;J. Jian;Jiecai Han;H. Bao;Hui Li;Yu Liu;H. Zuo;Wen Wang
中科院分区：
文献类型：
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作者：
B. Song;K. Zhu;Jun Liu;J. Jian;Jiecai Han;H. Bao;Hui Li;Yu Liu;H. Zuo;Wen Wang
近年来，未掺杂半导体由于没有金属偏析产生的伪铁磁性（FM）信号而被推到了稀磁半导体（DMS）的前沿。然而，在未掺杂的半导体纳米结构中仍然有一些方面未被触及，包括：1）在制造过程中自旋矩的演变; 2）磁性和形态特征之间可能的内在关系，后者也取决于形成过程。在本文中，我们合成了未掺杂的InN纳米结构，并观察到一个渐进的磁性从抗磁性到FM的转变，并从管形到线状的产品随着氮化时间的增加，一个明显的形貌演变。据推测，增加的表面缺陷，如N空位的形态转变过程中的FM阶随氮化时间的增加的内在原因。这些结果为理解纳米结构DMS的真正磁性起源和纳米结构材料的性质不一致性提供了一些有用的线索。
Recently, undoped semiconductors have been pushed to the frontiers of diluted magnetic semiconductors (DMSs) since no spurious ferromagnetism (FM) signal from metal segregation occurs. However, some aspects still remain untouched in undoped semiconductors nanostructures, including: 1) the evolution of spin moments during the fabrication process; 2) possible intrinsic relationship between the magnetic properties and morphological features, the latter being also dependent on formation process. In this article, we synthesized undoped InN nanostructures and observed a gradual magnetic transition from diamagnetic to FM, and an obvious morphology evolution from tube-shape to wire-shape products with the increase of nitridation time. It is speculated that increasing surface defects such as N vacancies in the morphology transition process are the intrinsic causes for the enhanced FM order with increase of nitridation time. The results provide some useful clues in understanding the true magnetic origin in nanostructured DMSs and reported properties inconsistencies in nanostructured materials.