Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC
Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC
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更好地理解 SiC 上的镍基欧姆接触
DOI：
10.4028/www.scientific.net/msf.679-680.465
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
H. Okumura
中科院分区：
文献类型：
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作者：
S. Tanimoto;Masanori Miyabe;Takamitsu Shiiyama;Tatsuhiro Suzuki;H. Yamaguchi;S. Nakashima;H. Okumura
N型4H和6H-碳化硅上的镍在高于950℃的温度下热处理时，为什么会获得低的接触电阻率，目前还没有达成一致意见。本文的目的是为这一问题提供一个答案。据报道，即使是在n++区形成的镍基接触，在>；900℃的温度范围内也表现出接触电阻率的急剧下降，这种下降不能用han和他的同事提出的碳空位诱导施主模型(VC模型)来解释。太棒了。李特，第79卷，第1816页(2001)]。此外，观察到在1000℃下热处理的衬底表面并没有覆盖Ni2Si，而是覆盖了一层很薄的NiSi。最后提出了一个合理的模型，即由于高温热处理的结果，导致在衬底界面形成了NiSi/SiC系统，导致低接触电阻率显著降低。
There is still little consensus regarding why low contact resistivity is achieved when Ni on n-type 4H- and 6H-SiC is annealed at temperatures of more than above 950°C. The objective of this paper is to provide an answer concerning to this question. It is has been reported that even Ni-based contacts formed in the n++ region exhibited a steep reduction of contact resistivity in an annealing temperature range > 900°C. This effect reduction cannot be explained by the carbon vacancy induced donor model (Vc model) proposed by Han and his coworkers [Appl. Phys. Lett., Vol. 79, p. 1816 (2001)]. And, it is clarified that It was observed that the surface of substrates annealed at 1000°C was not covered with not Ni2Si but with a thin layer of NiSi. Finally, a plausible model is proposed that as the result of annealing at higher temperatures, results in the formation of the a NiSi/SiC system is builtat the substrate interface, resulting in significant reduction in low causing contact resistivity to be reduced significantly.