Retention of hydrogen implanted into SiC single crystals
Retention of hydrogen implanted into SiC single crystals
复制标题
注入SiC单晶的氢的保留
DOI：
10.1016/0022-3115(84)90453-7
复制
发表时间：
1984
影响因子：
3.1
通讯作者：
K. Kamada
中科院分区：
文献类型：
--
作者：
S. Nagata;S. Yamaguchi;Y. Fujino;M. Hirabayashi;K. Kamada
利用弹性反冲探测（ERD）分析技术，测量了13 keV H+和10 keV D+注入SiC单晶中H和D的浓度分布。所获得的配置文件进行了比较与模拟的范围配置文件，以及在注入过程中创建的缺陷分布。通过等时退火至1200° C研究了晶体中D的热释放。D在SiC中的结合能为4.0± 0.2eV。
By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H+ and 10 keV D+ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200° C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.