Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
复制标题
通过晶圆键合制造用于红外反射吸收光谱的 CoSi2 埋金属层硅衬底
DOI：
10.1143/jjap.42.3942
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Urisu
中科院分区：
文献类型：
--
作者：
S. Yamamura;S. Yamauchi;S. Watanabe;M. Tabe;T. Kasai;Y. Nonogaki;T. Urisu
基于埋层金属衬底的红外反射吸收光谱技术是一种高分辨率、高灵敏度的表面振动光谱技术。一个独特的特征是包括所谓的指纹区域在内的宽频率范围。用Co离子注入法制备的CoSi2-Si(100)BML衬底已得到广泛应用。然而，该技术存在一些问题，如由于离子注入损伤而产生的表面粗糙度。为了解决这些问题，在这项工作中，我们研究了通过Co沉积的Si(100)晶片与绝缘体上的Si晶片(SOI)之间的晶片键合来制备原子级平坦表面的BML衬底。在制备的BML衬底表面沉积了十八烷基三氯硅烷和辛烯基三氯硅烷自组装烷基单分子膜(SAM)。在从拉伸到弯曲的较宽频率范围内观察到了良好的BML-IRRAS光谱。此外，还发现沉积了有序的自组装膜。
Infrared reflection absorption spectroscopy (IRRAS) using buried metal layer substrates (BML) is one of the high resolution and high sensitive surface vibration spectroscopy techniques. A unique characteristic is the wide frequency range including the so-called finger print region. The CoSi2 Si(100) BML substrates fabricated by Co ion implantation have been used to date. However, the technique has several problems such as the resultant surface roughness due to the ion implantation damage. To solve these problems, in this work, we have examined the fabrication of BML substrates with atomic-level flat surfaces by the wafer-bonding between a Co deposited Si(100) wafer and a Si on insulator (SOI) wafer. Self-assembled alkyl monolayers (SAMs) of octadecyltrichlorosilane and octenyltrichlorosilane were deposited on the fabricated BML substrate surface. Good BML-IRRAS spectra were observed in the wide frequency range from stretching to bending regions. It was also found that well-ordered SAMs were deposited.