Understanding Structure and Bonding of Multilayered Metal-Organic Nanostructures.

Understanding Structure and Bonding of Multilayered Metal-Organic Nanostructures.
复制标题

DOI:
10.1021/jp309943k
复制
发表时间:
2013-02-14
影响因子:
3.7
通讯作者:
Zojer, Egbert
Zojer, Egbert
中科院分区:
化学3区
文献类型:
--
作者:
Egger, David A.;Ruiz, Victor G.;Said, Wissam A.;Bucko, Tomas;Tkatchenko, Alexandre;Zojer, Egbert

文献摘要

参考文献

被引文献

相似文献

对于有机和杂化电子器件,所含界面的物理化学性质起着主导作用。为了阐明发生在这种异质界面上的各种相互作用,我们在这里建立了一个复杂的、原型的三组分系统模型,该系统由cu -酞菁(CuPc)膜组成,该膜位于吸附在Ag(111)上的3,4,9,10-苝-四羧基二酐(PTCDA)单层上。遇到的两个界面是相似的,因为在这两种情况下,没有范德华相互作用就没有成键。尽管如此,它们也有明显的不同,因为只有在Ag(111) -PTCDA界面才会发生大量的电荷重排。利用最近开发的理论工具,我们表明,在这种相对复杂的纳米结构中,区分涉及电荷密度的局部重排和远距离范德华吸引力的相互作用,已经有可能提供原子层面的物理和化学过程。
For organic and hybrid electronic devices, the physicochemical properties of the contained interfaces play a dominant role. To disentangle the various interactions occurring at such heterointerfaces, we here model a complex, yet prototypical, three-component system consisting of a Cu–phthalocyanine (CuPc) film on a 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) monolayer adsorbed on Ag(111). The two encountered interfaces are similar, as in both cases there would be no bonding without van der Waals interactions. Still, they are also distinctly different, as only at the Ag(111)–PTCDA interface do massive charge-rearrangements occur. Using recently developed theoretical tools, we show that it has become possible to provide atomistic insight into the physical and chemical processes in this comparatively complex nanostructure distinguishing between interactions involving local rearrangements of the charge density and long-range van der Waals attraction.
DOI: 10.1103/physrevb.54.11169
发表时间: 1996-10-15
期刊: PHYSICAL REVIEW B
影响因子: 3.7
作者:
Kresse, G;Furthmuller, J
通讯作者: Furthmuller, J
DOI: 10.1021/nl2041113
发表时间: 2012-02-01
期刊: NANO LETTERS
影响因子: 10.8
作者:
Al-Saidi, W. A.;Feng, Haijun;Fichthorn, Kristen A.
通讯作者: Fichthorn, Kristen A.
DOI: 10.1021/nl101874k
发表时间: 2010-11-01
期刊: NANO LETTERS
影响因子: 10.8
作者:
Hofmann, Oliver T.;Egger, David A.;Zojer, Egbert
通讯作者: Zojer, Egbert
DOI: 10.1103/physrevlett.99.256801
发表时间: 2007-12-21
影响因子: 8.6
作者:
Romaner, Lorenz;Heimel, Georg;Zojer, Egbert
通讯作者: Zojer, Egbert
DOI: 10.1063/1.1864932
发表时间: 2005-03-22
影响因子: 4.4
作者:
Bucko, T;Hafner, J;Angyán, JG
通讯作者: Angyán, JG