Field-induced Strain Memory with Non-180° Domain-reorientation Control
Field-induced Strain Memory with Non-180° Domain-reorientation Control
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DOI：
10.3938/jkps.57.902
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发表时间：
2010-10-01
影响因子：
0.6
通讯作者：
Morita, Takeshi
中科院分区：
文献类型：
--
作者：
Kadota, Yoichi;Hosaka, Hiroshi;Morita, Takeshi
利用非180度畴重取向控制，提出了铁电陶瓷中的应变记忆效应。对软质锆钛酸铅（PZT）陶瓷施加非对称幅值电场，测量了PZT陶瓷的应变滞后和极化曲线。当外加电场具有一定的非对称振幅时，蝶形曲线变得不对称。非对称蝶形曲线在零电场下有两个稳定的应变状态。因此，应变记忆效应被实现为两个稳定应变状态之间的差异。进行XRD分析以验证非180度畴重取向对应变记忆效应的贡献。非180度畴重取向被确定为（002）峰与（200）峰的强度比。由宏观应变测量确定的应变记忆与非180度畴体积分数呈线性关系。这一结果表明，应变记忆的起源是非180度畴重取向。
Using non-180 degrees domain-reorientation control, we propose the strain memory effect in ferroelectric ceramics. Electric fields with asymmetric amplitudes were applied to soft-type lead zirconate titanate (PZT) ceramics, and the strain hysteresis and the polarization loop were measured. The butterfly curve became asymmetric under an electric field with a particular asymmetric amplitude. The asymmetric butterfly curve had two stable strain states at zero electric field. Thus, the strain memory effect was realized as the difference between the two stable strain states. An XRD analysis was carried out to verify the contribution of the non-180 degrees domain reorientation to the strain memory effect. The non-180 degrees domain reorientation was determined as the intensity ratio of the (002) to the (200) peak. The strain memory determined from macroscopic strain measurements had a linear relationship to the non-180 degrees domain volume fraction. This result indicated the origin of the strain memory to be the non-180 degrees domain reorientation.