Imaging mechanism and effects of adsorbed water in contact‐type scanning capacitance microscopy
Imaging mechanism and effects of adsorbed water in contact‐type scanning capacitance microscopy
复制标题
接触式扫描电容显微镜中吸附水的成像机制和影响
DOI：
10.1116/1.589168
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发表时间：
1996
影响因子：
1.4
通讯作者：
Yoshihiko Suzuki
中科院分区：
文献类型：
--
作者：
N. Nakagiri;Yamamoto Takuma;H. Sugimura;Yoshihiko Suzuki
为了展示其独特的成像能力，采用扫描电容显微镜和接触原子力显微镜组成的组合式显微镜对埋藏结构进行了成像。原子力显微镜成像表面形貌，而扫描电容显微镜同时成像埋藏结构。通过调制技术，利用电容的电压导数（dC/dV）作为扫描电容显微镜信号。用于演示的样品是一个硅晶片，其金属线厚度为4纳米，上面覆盖着40纳米厚的氧化硅层。扫描电容显微镜的图像取决于施加在探针和样品上的偏置电压。由于扫描电容显微镜在金属线上方的信号为零，因此扫描电容显微镜图像中对比度的偏置电压依赖关系直接对应于扫描电容显微镜在金属线未埋入位置的信号与V的关系…
In order to demonstrate its unique capabilities, a combined microscope comprised of a scanning capacitance microscope and a contact mode atomic force microscope was used to image a buried structure. The atomic force microscopy images surface topography, while the scanning capacitance microscope simultaneously images buried structure. By applying a modulation technique, the voltage derivative of the capacitance (dC/dV) was used as a scanning capacitance microscope signal. The sample used for the demonstration was a silicon wafer with metal lines 4 nm in thickness covered by a 40‐nm‐thick layer of silicon oxide. The scanning capacitance microscope image was dependent on the bias voltage applied to the probe and the sample. Since the scanning capacitance microscope signal above the metal lines is zero, the bias voltage dependency of the contrast in scanning capacitance microscope images corresponds directly to the scanning capacitance microscope signal versus V at locations where the metal line is not buried...