The influence of visible light on transparent zinc tin oxide thin film transistors
The influence of visible light on transparent zinc tin oxide thin film transistors
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DOI：
10.1063/1.2806934
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发表时间：
2007-11-05
影响因子：
4
通讯作者：
Kowalsky, W.
中科院分区：
文献类型：
--
作者：
Goerrn, P.;Lehnhardt, M.;Kowalsky, W.
报道了透明锌锡氧化物薄膜晶体管（TTFT）在可见光照射下的特性。一般情况下，阈值电压Vth、饱和场效应迁移率μ（sat）可逆下降，截止电流增加，暗区恢复时间尺度由半导体的持续光电导决定。具有调谐的[Zn]：[Sn]比率的器件在整个可见光谱中在5 mW/cm（2）（亮度> 30 000 cd/m（2））的照射下显示出小于2 V的Vth偏移。这些结果表明TTFT是透明有源矩阵有机发光二极管显示器中像素驱动器的候选者。
The characteristics of transparent zinc tin oxide thin film transistors (TTFTs) upon illumination with visible light are reported. Generally, a reversible decrease of threshold voltage V-th, saturation field effect mobility mu(sat), and an increase of the off current are found. The time scale of the recovery in the dark is governed by the persistent photoconductivity in the semiconductor. Devices with tuned [Zn]:[Sn] ratio show a shift of V-th of less 2 V upon illumination at 5 mW/cm(2) (brightness > 30 000 cd/m(2)) throughout the visible spectrum. These results demonstrate TTFTs which are candidates as pixel drivers in transparent active-matrix organic light emitting diode displays.