Highly Efficient Copper-Zinc-Tin-Selenide ( CZTSe) Solar Cells by Electrodeposition
Highly Efficient Copper-Zinc-Tin-Selenide ( CZTSe) Solar Cells by Electrodeposition
复制标题
DOI：
10.1002/cssc.201301347
复制
发表时间：
2014-04-01
期刊：
影响因子：
8.4
通讯作者：
Kim, Jin Young
中科院分区：
文献类型：
--
作者：
Jeon, Jong-Ok;Lee, Kee Doo;Kim, Jin Young
采用电沉积技术制备了高效的铜锌锡硒(Cu2ZnSnSe4；CZTSe)薄膜太阳电池。在恒流下从单一水浴中直接沉积贫铜、富锌成分的金属合金前驱体(CZT)薄膜，并在400-600℃的Se气氛下进行热处理，将前驱体薄膜转化为CZTSe。CZTSe的晶化从400℃开始，500℃完成，而晶体在更高的温度下继续生长。由于结晶性增强和物理性能差之间的折衷，550℃热处理的CZTSe薄膜表现出最佳和最稳定的器件性能，达到8.0%的激活效率，是电沉积CZTSe薄膜太阳能电池效率最高的之一。进一步的电子性能分析和与另一种基于肼溶液制备的最先进器件的比较表明，通过优化薄膜厚度、减反射涂层、MoSe2形成和p-n结特性等参数，可以进一步提高转换效率。
Highly efficient copper-zinc-tin-selenide (Cu2ZnSnSe4; CZTSe) thin-film solar cells are prepared via the electrodepostion technique. A metallic alloy precursor (CZT) film with a Cu-poor, Zn-rich composition is directly deposited from a single aqueous bath under a constant current, and the precursor film is converted to CZTSe by annealing under a Se atmosphere at temperatures ranging from 400 degrees C to 600 degrees C. The crystallization of CZTSe starts at 400 degrees C and is completed at 500 degrees C, while crystal growth continues at higher temperatures. Owing to compromises between enhanced crystallinity and poor physical properties, CZTSe thin films annealed at 550 degrees C exhibit the best and most-stable device performances, reaching up to 8.0% active efficiency; among the highest efficiencies for CZTSe thin-film solar cells prepared by electrodeposition. Further analysis of the electronic properties and a comparison with another state-of-the-art device prepared from a hydrazine-based solution, suggests that the conversion efficiency can be further improved by optimizing parameters such as film thickness, antireflection coating, MoSe2 formation, and p-n junction properties.