Carbon atomic chain formation on the β-SiC(100) surface by controlled sp→sp3 transformation
Carbon atomic chain formation on the β-SiC(100) surface by controlled sp→sp3 transformation
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DOI：
10.1103/physrevlett.81.5868
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发表时间：
1998-12-28
影响因子：
8.6
通讯作者：
Gautier, J
中科院分区：
文献类型：
--
作者：
Derycke, V;Soukiassian, P;Gautier, J
我们使用原子分辨扫描隧道显微镜来证明碳原子链在c端β - sic（100）表面的形成。这些碳原子线表现出极高的热稳定性（高达约1200摄氏度），包括弯曲的单键C-C二聚体（sp(3)），其方向垂直于C=C三键二聚体（sp），形成C （2 × 2）表面重构。它们的存在不会导致或来自表面反相边界，并且它们的密度随退火时间的延长而增加。结果表明，各向异性（拉伸和压缩）表面应力是碳sp—> sp(3)类金刚石温控转变的主要驱动力。
We use atom-resolved scanning tunneling microscopy to evidence the formation of carbon atomic chains on the C-terminated beta-SiC(100) surface. These carbon atom lines, which exhibit an extremely high thermal stability (up to approximate to 1200 degrees C), comprise buckled single bond C-C dimers (sp(3)) having a direction perpendicular to the C=C triple bond dimers (sp) forming a c(2 x 2) surface reconstruction. Their presence does not result in/or from surface antiphase boundaries, and their density increases with annealing time. The results suggest anisotropic (tensile and compressive) surface stress as a leading driving force in this carbon sp --> sp(3) diamondlike temperature controlled transformation.