Pronounced electromigration of GaInSn/Cu interconnects under super low critical current density
Pronounced electromigration of GaInSn/Cu interconnects under super low critical current density
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超低临界电流密度下 GaInSn/Cu 互连的明显电迁移
DOI：
10.1016/j.matlet.2021.130137
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发表时间：
2021-06-03
影响因子：
3
通讯作者：
Wang, Yunpeng
中科院分区：
文献类型：
--
作者：
Gao, Zhaoqing;Dong, Chong;Wang, Yunpeng
镓基合金作为一种有前途的柔性可拉伸电子器件材料，正受到越来越多的关注。非键合GaInSn/Cu互连线的界面稳定性是决定其电性能的关键因素。在这里，我们报告了一个有趣的电迁移现象下的电流通量和验证的原子迁移通过GaInSn路径从阴极到阳极。Cu/ GaInSn/Cu的室温电迁移临界电流密度比其它电迁移体系低两个数量级。当采用结合强度较高的Ni代替Cu作为阳极时，由于金属间化合物晶胚的数量较少，阳极材料的抗电迁移性能得到了显著提高。我们的研究结果将为Cu/GaInSn/Cu的电迁移提供很好的见解，并可能为高性能Ga基软和可拉伸电子器件的设计提供关键的第一步。(c)2021爱思唯尔有限公司版权所有。
Ga-based alloys has been paid increasingly attention as a promising material choice for constructing flexible and stretchable electronics. The interfacial stability of non-bonding GaInSn/Cu interconnect plays a critical role in determining its electrical performance. Here, we report an interesting electromigration phenomenon under current flux and verify the atoms migration through the GaInSn path from cathode to the anode. The critical current density for inducing the room temperature electromigration of Cu/ GaInSn/Cu is two orders of magnitude lower than that of other electromigration system. When Ni which has a higher bond strength is employed to substitute Cu anode, due to the small number of intermetallic compounds embryos, the electromigration resistance of anode material is substantially improved. Our findings will provide good insights into the electromigration of Cu/GaInSn/Cu and may offer a critical first step toward the design of high-performance Ga-based soft and stretchable electronics. (c) 2021 Elsevier B.V. All rights reserved.