Towards silicon nanocrystals based solar cells: Morphological properties and conduction phenomena
Towards silicon nanocrystals based solar cells: Morphological properties and conduction phenomena
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基于硅纳米晶体的太阳能电池：形态特性和传导现象
DOI：
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发表时间：
2010
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通讯作者：
Pierre Mur
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文献类型：
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作者：
K. Surana;H. Lepage;D. Bellet;G. Carval;Mathieu Baudrit;Philippe Thony;Pierre Mur
在这项工作中，我们介绍了用于先进第三代光伏电池的量子限制硅纳米点的制造以及结构和电学表征。硅通过在 SiO2 中形成量子限制的纳米晶体（直径 < 10 nm）并允许带隙大于体的带隙（1.1 eV）来实现带隙控制。我们研究了这种嵌入直径约 5 nm 的硅纳米晶体 (nc-Si) 的 SiO2 薄膜的特性。 GIXRD、HRTEM、FTIR、XPS 和光谱椭圆光度计等技术已用于研究纳米晶体的薄膜结构、尺寸和分布。与主要介电材料的预期相反，在我们的 nc-Si 嵌入式 SiO2 薄膜中观察到显着的传导。这种传导可能是通过纳米点进行的，对于集成到光伏器件中来说是一个有希望的结果。
In this work, we present the fabrication and the structural and electrical characterization of quantum confined silicon nanodots for advanced 3rd generation photovoltaic cells. Silicon permits its bandgap control by forming quantum confined nanocrystals in SiO2 (diameter < 10 nm) and allowing a bandgap of more than that of the bulk (1.1 eV). We examine the properties of such films of SiO2 with embedded silicon nanocrystals (nc-Si) of diameter ≈ 5 nm. Techniques like GIXRD, HRTEM, FTIR, XPS and spectroscopic ellipsometry have been used to investigate the film structure, size and distribution of the nanocrystals. Contrary to expectations from a largely dielectric material, significant conduction has been observed in our nc-Si embedded SiO2 film. This conduction, likely to be via the nanodots, is a promising result for integration into photovoltaic devices.