Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography
Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography
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DOI：
10.7567/apex.6.066602
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发表时间：
2013-06
影响因子：
2.3
通讯作者：
H. Takamizawa;K. Hoshi;Yasuo Shimizu;F. Yano;Koji Inoue;Shinji Nagata;T. Shikama;Y. Nagai
中科院分区：
文献类型：
--
作者：
H. Takamizawa;K. Hoshi;Yasuo Shimizu;F. Yano;Koji Inoue;Shinji Nagata;T. Shikama;Y. Nagai
虽然从器件物理学的观点来看，硅（Si）中的氢（H）的表征是令人感兴趣的，但是使用常规分析方法这是困难的。在这项研究中，氘（D）作为替代的H，和注入的D离子在Si（100）中的分布进行了研究，使用原子探针层析成像（APT）。D可以与APT室中的残余H气体区分开。APT结果表明，D倾向于形成团簇，其分布与使用透射电子显微镜识别的311个缺陷的分布相似，这表明D离子在这些缺陷附近偏析。
Although characterization of hydrogen (H) in silicon (Si) is of interest from a device physics viewpoint, this is difficult using conventional analytical methods. In this study, deuterium (D) was used as a proxy for H, and the distribution of implanted D-ions in Si(100) was investigated using atom probe tomography (APT). D can be distinguished from the residual H gas in the APT chamber. The APT results indicated that D tended to form clusters, whose distribution was similar to that of 311 defects identified using transmission electron microscopy, suggesting that the D ions segregate in the vicinity of these defects.