Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
复制标题
准分子激光辐照控制多晶硅成核和凝固方向
DOI：
10.1143/jjap.39.l1
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发表时间：
2000
影响因子：
1.5
通讯作者：
N. Sasaki
中科院分区：
文献类型：
--
作者：
A. Hara;N. Sasaki
采用准分子激光结晶控制多晶硅的成核位置和凝固方向。在非晶硅岛的侧壁和顶部覆盖一层较厚的多晶硅，其中包括一个逐渐缩小的区域，并从背面进行单次照射。在一个宽度为横向生长距离两倍的逐渐缩小的区域内，只观察到一个核的形成。然后在宽2µm，长3µm的区域内，从核向较窄宽度区域凝固。根据多晶硅覆盖形成的温度梯度和逐渐缩小的结构来解释生长机理。
The nucleation site and solidification direction of polycrystalline silicon were controlled by excimer laser crystallization. The sidewall and the top of the amorphous silicon island, which includes a gradually narrowing region, were covered with a thick layer of polycrystalline silicon, and single-shot irradiation was performed from the back surface. The formation of only one nucleus was observed in a gradually narrowing region of width two times that of the lateral growth distance. Solidification from the nucleus toward a narrower width region was then effected in a region 2 µm in width and 3 µm in length. The growth mechanism is explained on the basis of the temperature gradient formed by the covering of the polycrystalline silicon and the gradually narrowing structure.