Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
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DOI：
10.1088/1361-6641/aa78cd
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发表时间：
2017-08
影响因子：
1.9
通讯作者：
I. Valov
中科院分区：
文献类型：
--
作者：
I. Valov
基于氧化还原的阻变存储器是当今学术界和工业界研究最多的系统之一。这些设备可扩展到几乎原子级，应该不仅适用于下一代非易失性存储器，而且适用于神经形态计算，替代逻辑操作和选择器设备。这些细胞的主要特征是它们的纳米至亚纳米尺寸。这使得控制，特别是预测它们的性质非常具有挑战性。要更好地理解和改进这些系统的控制，方法之一是研究和修改它们的接口。在本文中，首先将讨论基本原理，因为这些对于理解哪些因素控制纳米级界面特性至关重要。此外，将示例性地示出针对ECM型和VCM型电池报告的电极/固体电解质界面处的不同类型的相互作用。最后，将强调用于修改接口和克服现有问题的策略和不同的解决方案，以实现更稳定和可靠的设备。
Redox-based resistive switching memories are nowadays one of the most studied systems in both academia and industrial communities. These devices are scalable down to an almost atomic level and are supposed to be applicable not only for next-generation nonvolatile memories, but also for neuromorphic computing, alternative logic operations and selector devices. The main characteristic feature of these cells is their nano- to sub-nano dimension. This makes the control and especially prediction of their properties very challenging. One of the ways to achieve better understanding and to improve the control of these systems is to study and modify their interfaces. In this review, first the fundamentals will be discussed, as these are essential for understanding which factors control the nanoscale interface properties. Further, different types of interactions at the electrode/solid electrolyte interface reported for ECM- and VCM-type cells will be exemplarily shown. Finally, the strategies and different solutions used to modify the interfaces and overcome the existing problems on the way to more stable and reliable devices will be highlighted.