Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy
Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy
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DOI：
10.1103/physrevlett.93.266102
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发表时间：
2004-12-31
影响因子：
8.6
通讯作者：
Hasegawa, Y
中科院分区：
文献类型：
--
作者：
Eguchi, T;Fujikawa, Y;Hasegawa, Y
高分辨率非接触式原子力显微镜 (AFM) 图像成功地在 Si(105) 基板上形成的 Ge(105)-(1x2) 结构上拍摄，并显示了表面的所有悬挂键，无论其电子状态如何，超越了扫描隧道显微镜，其图像由于所涉及的电子状态而与原子结构严重偏离。采用 AFM 的开尔文探针方法获得的原子分辨静电势分布显示了悬空键态之间的电势变化，从而直接观察它们之间的电荷转移。这些结果清楚地表明，采用开尔文探针方法的高分辨率非接触式 AFM 是分析原子结构和表面电子特性的理想工具。
High-resolution noncontact atomic force microscope (AFM) images were successfully taken on the Ge(105)-(1x2) structure formed on the Si(105) substrate and revealed all dangling bonds of the surface regardless of their electronic situation, surpassing scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. An atomically resolved electrostatic potential profile by a Kelvin-probe method with AFM shows potential variations among the dangling bond states, directly observing a charge transfer between them. These results clearly demonstrate that high-resolution noncontact AFM with a Kelvin-probe method is an ideal tool for analysis of atomic structures and electronic properties of surfaces.