Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires
Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires
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DOI：
10.1088/1674-1056/20/7/078101
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发表时间：
2011-07
影响因子：
1.7
通讯作者：
L. Xin;Huang Dong-Liang;Wu Lili;Zhang Xitian;Zhang Wei-guang
中科院分区：
文献类型：
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作者：
L. Xin;Huang Dong-Liang;Wu Lili;Zhang Xitian;Zhang Wei-guang
采用化学气相沉积法成功制备了一维InAlO3（ZnO）m超晶格纳米线。透射电子显微镜测量表明，纳米线具有周期性的层状结构沿沿着0001方向。首次研究了InAlO3（ZnO）m超晶格纳米线的光致发光特性。由于局域尾态的形成，近带边发射出现了明显的红移。中心在3.348 eV和3.299 eV的两个峰表明在低温区存在杠杆现象。结合InAlO3（ZnO）m的特殊能带结构，提出了一种新的发光机制。
One-dimension InAlO3(ZnO)m superlattice nanowires were successfully synthesized via chemical vapor deposition. Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 0001 direction. The photoluminescence properties of InAlO3(ZnO)m superlattice nanowires are studied for the first time. The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states. The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region. A new luminescence mechanism is proposed, combined with the special energy band structure of InAlO3(ZnO)m.