Epitaxial MgO on GaAs(111) as a buffer layer for z‐cut epitaxial lithium niobate
Epitaxial MgO on GaAs(111) as a buffer layer for z‐cut epitaxial lithium niobate
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DOI：
10.1063/1.109824
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发表时间：
1993-08
影响因子：
4
通讯作者：
D. Fork;G. B. Anderson
中科院分区：
文献类型：
--
作者：
D. Fork;G. B. Anderson
在GaAs（111）A和GaAs（111）B上的外延系统z-硼酸锂已经通过原位脉冲激光沉积（有和没有MgO（111）中间层）被证明。面内外延关系是LiNbO 3 [110] → GaAs[211]和[211]，表明在有和没有MgO层的LiNbO 3中存在180°边界，其与GaAs一起生长立方体。MgO和LiNbO 3层的面外织构通常分别为1.0°和1.2°。MgO和LiNbO 3层的面内织构通常分别为2.8°和4.5°。该外延系统可用于单片电光或倍频应用，结合半导体激光二极管。
The epitaxial system z‐lithium niobate on GaAs(111)A and GaAs(111)B has been demonstrated by in situ pulsed laser deposition both with and without intermediate layers of MgO(111). The in‐plane epitaxial relationships are LiNbO3[110]∥GaAs[211] and [211] indicating the existence of 180° boundaries in the LiNbO3 both with and without the MgO layer, which grows cube‐on‐cube with the GaAs. Out‐of‐plane texture is typically 1.0° and 1.2° for the MgO and LiNbO3 layers, respectively. In‐plane texture is typically 2.8° and 4.5° for the MgO and LiNbO3 layers, respectively. This epitaxial system may be useful for monolithic electro‐optic or frequency doubling applications in conjunction with semiconductor laser diodes.