Surface-roughness fractality effects in electrical conductivity of single metallic and semiconducting films
Surface-roughness fractality effects in electrical conductivity of single metallic and semiconducting films
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DOI：
10.1103/physrevb.56.7726
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发表时间：
1997-09
影响因子：
3.7
通讯作者：
G. Palasantzas;J. Barnaś
中科院分区：
文献类型：
--
作者：
G. Palasantzas;J. Barnaś
在玻恩近似的框架下，研究了具有自仿射分形表面的金属和半导体薄膜的表面粗糙度对电导率的影响。表面粗糙度由k相关模型描述，并由粗糙度指数H（0≤H≤1）、面内相关长度λ和均方根粗糙度幅度Δ表征。在金属膜的情况下，电导率被示出为随着H从H=0增加到H=1以及随着Δ/Δ的减小而单调增加。对于半导体量子威尔斯的电导率表现出一种特殊的相互作用的量子力学效应和散射由于表面粗糙度。
Surface-roughness effects in electrical conductivity of thin metallic and semiconducting films with self-affine fractal surfaces are considered in the framework of the Born approximation. The surface roughness is described by the k-correlation model, and is characterized by the roughness exponent H (0≤H≤1), the in-plane correlation length ξ, and the rms roughness amplitude Δ. In the case of metallic films the conductivity is shown to increase monotonically with H increasing from H=0 to H=1 and with decreasing ratio Δ/ξ. For semiconducting quantum wells the conductivity shows a peculiar interplay of quantum-mechanical effects and scattering due to surface roughness.