Silicon-based quantum dots: synthesis, surface and composition tuning with atmospheric pressure plasmas
Silicon-based quantum dots: synthesis, surface and composition tuning with atmospheric pressure plasmas
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DOI：
10.1088/0022-3727/48/31/314002
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发表时间：
2015-08-12
影响因子：
3.4
通讯作者：
Mariotti, Davide
中科院分区：
文献类型：
--
作者：
Askari, Sadegh;Macias-Montero, Manuel;Mariotti, Davide
讨论了硅和硅基量子点（直径< 5 nm）的合成。重点介绍了大气压等离子体合成硅基量子点的研究进展。大气压等离子体，然后与其他合成方法，包括低压等离子体，湿化学，电化学蚀刻和激光为基础的方法进行了比较。最后，讨论了合金硅量子点的合成进展，报道了纳米Si-Sn和Si-C系统。该报告还包括一个理论分析，强调了大气压下等离子体提供的一些基本差异，并可能为具有有利特性的新型材料提供机会。
The synthesis of silicon and silicon-based quantum dots (diameter < 5 nm) is discussed. Specifically the synthesis of Si-based quantum dots (QDs) by atmospheric pressure plasmas is reviewed and the most recent developments are also reported. Atmospheric pressure plasmas are then compared with other synthesis methods that include low pressure plasmas, wet chemistry, electrochemical etching and laser-based methods. Finally, progress in the synthesis of alloyed silicon QDs is discussed where the nanoscale Si-Sn and Si-C systems are reported. The report also includes a theoretical analysis that highlights some fundamental differences offered by plasmas at atmospheric pressure and that may provide opportunities for novel materials with advantageous properties.