An X-Band Oscillator Utilizing Overtone Lithium Niobate MEMS Resonator and 65-nm CMOS
An X-Band Oscillator Utilizing Overtone Lithium Niobate MEMS Resonator and 65-nm CMOS
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DOI：
10.1109/ifcs-isaf41089.2020.9234845
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发表时间：
2020-07
期刊：
影响因子：
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通讯作者：
Ali Kourani;Yansong Yang;S. Gong
中科院分区：
文献类型：
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作者：
Ali Kourani;Yansong Yang;S. Gong
本文提出了一种用于5G通信的8.6 GHz振荡器，该振荡器利用铌酸锂（LiNbO3）谐振器中的第三个反对称泛音（$A_{3}$）。该振荡器由一个闭环声谐振器和级联RF调谐放大器（TAs）组成，该放大器基于台积电RF GP 65nm CMOS。由片上电感设置的TAs带通响应满足Bark-hausen振荡条件，同时抑制基共振和高阶共振。该振荡器在1 kHz和100 kHz偏置下，从8.6 GHz输出实现- 56和- 113 dBc/Hz的相位噪声，同时消耗10.2 mW的直流功率。该振荡器在100 kHz偏置时的优值为201.6 dB，超过了最先进的（SoA） EM和RF-MEMS振荡器。
This paper presents an 8.6 GHz oscillator utilizing a third antisymmetric overtone ($A_{3}$) in a lithium niobate (LiNbO3) resonator for 5G communications. The oscillator consists of an acoustic resonator in a closed loop with cascaded RF tuned amplifiers (TAs) built on TSMC RF GP 65 nm CMOS. The TAs bandpass response, set by on-chip inductors, satisfies the Bark-hausen's oscillation conditions for $A_{3}$ while suppressing the fundamental and higher-order resonances. The oscillator achieves a measured phase noise of −56 and −113 dBc/Hz at 1 kHz and 100 kHz offsets from an 8.6 GHz output while consuming 10.2 mW of dc power. The oscillator also attains a figure-of-merit of 201.6 dB at 100 kHz offset, surpassing the state-of-the-art (SoA) EM and RF-MEMS oscillators.