Magnetization process in GdB4
Magnetization process in GdB4
复制标题
GdB4 磁化过程
DOI：
10.1143/jpsj.76.024711
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发表时间：
2007
影响因子：
1.7
通讯作者：
S. Michimura
中科院分区：
文献类型：
--
作者：
A. Kikkawa;K. Katsumata;Y. Narumi;K. Suga;Tomoya Fukui;T. Sugaya;K. Kindo;F. Iga;S. Michimura
在高达14T的静电场和高达∼60T的脉冲场下，测量了GdB4单晶样品的磁化强度。当外加磁场H时，磁化强度在约12T处非线性增加，表明自旋从易轴向垂直于H的方向重新取向。饱和场H S是，H S[1 1 0]≃5 2 T，H S[1 0 0]≃5 2 T和H S[0 0 1]≃5 4T。我们得到J1/kB=-8.9K和J2/kB=-0.68K，其中J1和J2分别是对角线交换作用和沿正方形边缘的交换作用。
Magnetization measurements are made on single crystal samples of GdB 4 under static fields up to 14 T and pulsed fields up to ∼60 T. When the external magnetic field, H , is applied along the [110] spin easy axis, the magnetization increases non-linearly at around 12 T, indicating a spin reorientation from the easy axis to the direction perpendicular to H . The values of saturation field, H s , are, H s [110] ≃52 T, H s [100] ≃52 T and H s [001] ≃54 T. We analyze the results based on the two-dimensional model proposed by Shastry and Sutherland [B. S. Shastry and B. Sutherland: Physica B 108 (1981) 1069]. We obtain J 1 / k B =-8.9 K and J 2 / k B =-0.68 K, where, J 1 and J 2 are the diagonal exchange interaction and the exchange interaction along the edges of a square, respectively.