Colorimetric porous photonic bandgap sensors with integrated CMOS color detectors
Colorimetric porous photonic bandgap sensors with integrated CMOS color detectors
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DOI：
10.1109/jsen.2006.874021
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发表时间：
2006-06-01
影响因子：
4.3
通讯作者：
Cartwright, Alexander N.
中科院分区：
文献类型：
--
作者：
Fang, Xiaoyue;Hsiao, Vincent K. S.;Cartwright, Alexander N.
在本文中，开发一种新的比色传感器系统的基础上集成的互补金属氧化物半导体（CMOS）颜色检测器与改性多孔聚合物光子带隙传感器的报告。颜色检测器集成电路（IC）用AMI（AMI半导体）1.5 μ m技术实现，AMI 1.5 μ m技术是在MOSIS（http：//www.example.com）可获得的标准CMOS制造工艺。www.mosis.org颜色探测器基于掩埋双结（BDJ）和堆叠三结（STJ）的光谱响应;结处的光电流比率提供光谱信息。这两种类型的颜色检测器的特点与单色器，并比较结果。BDJ颜色检测器与多孔光子带隙反射光栅一起使用，其反射光谱作为存在的蒸气分析物的浓度的函数而偏移。实验结果验证了光子晶体的颜色变化可以被检测到，并与分析物浓度的变化相关。整个系统结构紧凑，功耗低。
In this paper, the development of a novel colorimetric sensor system based on the integration of complementary metal-oxide-semiconductor (CMOS) color detectors with a modified porous polymeric photonic bandgap sensor is reported. The color detector integrated circuit (IC) is implemented with AMI (AMI Semiconductor) 1.5 mu m technology, a standard CMOS fabrication process available at MOSIS (http://www.mosis.org). The color detectors are based on the spectral responses of buried double junctions (BDJs) and stacked triple junctions (STJs); the ratio of the photocurrents at the junctions provides spectral information. Both types of color detectors are characterized with a monochromator, and the results are compared. The BDJ color detector is used with a porous photonic bandgap reflection grating whose reflection spectra shifts as a function of the concentration of vapor analyte present. The experimental results verify that the color change of the photonic crystal can be detected and correlated to the change in analyte concentration. The entire system is compact and low power.