Properties of Ferroelectric Memory FET Using Sr2(Ta, Nb)2O7 Thin Film
Properties of Ferroelectric Memory FET Using Sr2(Ta, Nb)2O7 Thin Film
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使用Sr2(Ta,Nb)2O7薄膜的铁电存储FET的特性
DOI：
10.1143/jjap.38.2285
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发表时间：
1998
影响因子：
1.5
通讯作者：
A. Kamisawa
中科院分区：
文献类型：
--
作者：
Y. Fujimori;Takashi Nakamura;A. Kamisawa
Sr 2Nb 2 O 7（SNO）族化合物适合用作铁电存储场效应晶体管（FET）的铁电材料，因为这些物质具有低介电常数、低矫顽场和高耐热性。得到了依赖于铁电极化的C-V和ID-VG电滞曲线。这些电容器被应用于浮栅铁电随机存取存储器（FFRAM）单元。在FFRAM单元的制造过程中，没有观察到双稳态电容器的铁电性的退化。我们成功地在比PZT所需的更低的电压下操作FFRAM单元。金属铁电金属绝缘体半导体（MFMIS）结构的数据保持特性的双金属薄膜首次被测量到长达2周。铁电体的漏电流与数据保持能力密切相关。MFMIS FET具有保留数据10年的潜力。
Compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant, low coercive field and high heat resistance. C–V and ID–VG hysteresis curves which depend on ferroelectric polarization were obtained. These capacitors were applied to floating gate ferroelectric random access memory (FFRAM) cells. The degradation in the ferroelectricity of STN capacitors was not observed during the fabrication of FFRAM cells. We succeeded in operating FFRAM cells at a lower voltage than that required for PZT. Data retention characteristics of metal ferroelectric metal insulator semiconductor (MFMIS) structures with STN films were first measured to be up to 2 weeks. Data retention is close related to be the leakage current of the ferroelectric. The MFMIS FET has the potential to retain data for 10 years.