Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS
Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS
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0.18 µm SiGe BiCMOS 差分可变增益跨阻放大器的设计
DOI：
10.3390/electronics9071058
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Xiaopeng Yu
中科院分区：
文献类型：
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作者：
Samuel B. S. Lee;Hang;K. Yeo;Jer;Xiaopeng Yu
本文介绍了两款采用TowerJazz的0.18 µm SiGe BiCMOS工艺（仅使用CMOS晶体管）设计的新型无电感差分可变增益跨导放大器（DVGTIA），具有电压偏置控制的可变增益。两者都包括一个改进的差分交叉耦合调节共源共栅放大器级和一个级联放大器级偏置控制增益变化和三阶交错反馈。对于DVGTIA设计1和2，测量的跨阻抗增益范围分别为24.5-60.6 dBΩ和27.8-62.8 dBΩ，带宽分别超过6.42 GHz和5.22 GHz。在1.8 V电源电压下，内核功耗分别为30.7 mW和27.5 mW，折合到输入端的噪声电流分别为10.3 pA/kHz和21.7 pA/kHz。DVGTIA设计1和2的动态范围分别为40.4 µA至3 mA和76.8 µA至2.7 mA，这两种设计都适用于片内光电探测器容性负载为250 fF的真实的光电探测器。两种设计都很紧凑，核心面积为100 µm × 85 µm。
This paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode preamplifier stage and a cascaded amplifier stage with bias-controlled gain-variation and third-order interleaving feedback. The designs have wide measured transimpedance gain ranges of 24.5–60.6 dBΩ and 27.8–62.8 dBΩ with bandwidth above 6.42 GHz and 5.22 GHz for DVGTIA designs 1 and 2 respectively. The core power consumptions are 30.7 mW and 27.5 mW from a 1.8 V supply and the input referred noise currents are 10.3 pA/√Hz and 21.7 pA/√Hz. The DVGTIA designs 1 and 2 have a dynamic range of 40.4 µA to 3 mA and 76.8 µA to 2.7 mA making both suitable for real photodetectors with an on-chip photodetector capacitive load of 250 fF. Both designs are compact with a core area of 100 µm × 85 µm.