An alternate spin-coating strategy toward high-quality polycrystalline thin Lu2O3: Eu3 + film fabrication
An alternate spin-coating strategy toward high-quality polycrystalline thin Lu2O3: Eu3 + film fabrication
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DOI：
10.1016/j.surfcoat.2016.06.049
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发表时间：
2016-09
影响因子：
5.4
通讯作者：
Xiangyang Chen;Guang-Xin Xiang;F. Chai;Zhi-Jun Zhang;S. Shi;Fangfang Xu;Jingtai Zhao
中科院分区：
文献类型：
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作者：
Xiangyang Chen;Guang-Xin Xiang;F. Chai;Zhi-Jun Zhang;S. Shi;Fangfang Xu;Jingtai Zhao
采用常规旋涂和交替旋涂的方法，在清洁的Si（100）衬底上成功地制备了掺铕氧化镥（Lu_2O_3：Eu ~（3+））多晶薄膜。利用X射线衍射（XRD）、光致发光（PL）谱、场发射电子扫描显微镜（FE-SEM）对薄膜进行了表征。扫描电镜观察表明，交替旋涂法制备的薄膜厚度和孔隙率均上级常规旋涂法，厚度增加95%，孔隙率降低26%，发光强度提高72%。理论计算和晶体学分析表明，Eu ~（3+）的5D ~（0 - 7）F_2发射主要是由非反型占据位引起的。
Europium-doped Lutetium oxide (Lu2O3: Eu3 +) polycrystalline films have been successfully fabricated on cleaned silicon (100) substrates by routine and alternate spin-coating techniques. X-ray diffraction (XRD), photoluminescence (PL) spectra, field emission electron scanning microscope (FE-SEM) are employed to characterize the as-fabricated films. The SEM observation reveals that the thickness and porosity of the film fabricated by the alternate spin-coating are superior to that by routine spin-coating, i.e. the thickness and porosity increase 95% and reduce 26%, respectively, resulting in 72% enhancement of the emission intensity. According to theoretical calculation and crystallographic analysis, the dominated5D0-7F2emission of Eu3 +can be assigned to the main non-inversion site occupancy.