Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides
Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides
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DOI：
10.1063/1.2147726
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发表时间：
2005-12-26
影响因子：
4
通讯作者：
Takagi, H
中科院分区：
文献类型：
--
作者：
Takenaka, K;Takagi, H
我们报道了在Ge掺杂的反钙钛矿锰氮化物Mn（3）AN（A=Cu，Zn，Ga）中发现了高达α =-25 × 10（-6）K-1（α：线性热膨胀系数）的大的负热膨胀（NTE）。这种巨大的NTE比市售的NTE材料高几倍到十倍。在纯Mn（3）AN中观察到的不连续晶格膨胀在宽的温度窗口上通过Ge取代而加宽，在室温附近在类似于100 K的最宽Δ T处。这种大的、各向同性的和非滞后的NTE对于实际应用是期望的。(c)2005年美国物理学会。
We report the discovery of a large negative thermal expansion (NTE) up to alpha=-25x10(-6) K-1 (alpha: coefficient of linear thermal expansion) in Ge-doped anti-perovskite manganese nitrides Mn(3)AN (A=Cu,Zn,Ga). This gigantic NTE is several to ten times higher than that of commercially available NTE materials. The discontinuous lattice expansion seen in pure Mn(3)AN is broadened by Ge substitution over a wide temperature window, at widest Delta T similar to 100 K, around room temperature. Such a large, isotropic and nonhysteretic NTE is desirable for practical applications. (c) 2005 American Institute of Physics.