Role of low temperature resistivity on fast electron transport in disordered aluminium and copper
Role of low temperature resistivity on fast electron transport in disordered aluminium and copper
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DOI：
10.1063/1.4928112
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发表时间：
2015-08
影响因子：
2.2
通讯作者：
D. Blackman;A. Robinson;J. Pasley
中科院分区：
文献类型：
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作者：
D. Blackman;A. Robinson;J. Pasley
为了确定发病的不稳定性和低温电阻率的冷电子等离子体之间的联系，通过无序铝和铜目标的快速电子的运输之间的比较是使用混合代码Zephyros。当激光强度低于5× 10 ~（19）Wcm ~（-2）时，材料在1 eV处的电阻率低于1μΩm时，材料的取向不稳定性得到抑制。有趣的是，铜靶显示出更大的电阻磁场增长，因此，更多的电子束准直，尽管在较低的温度下具有一贯较小的电阻率比铝。磁场强度的增加是抑制磁致伸缩不稳定性的原因。这是由于在相同条件下，铜和铝的电阻应变增长率在数值上非常接近。
To determine the link between the onset of the filamentation instability and the low temperature resistivity of the cold-electron plasma, a comparison between the transport of fast electrons through disordered aluminium and copper targets is made using the hybrid code Zephyros. The filamentation instability is suppressed at laser intensities below 5×1019 Wcm-2 for materials where the resistivity of the material is lower than 1μΩm at 1 eV. Interestingly, copper targets show larger resistive magnetic field growth, and as a result, more collimation of the electron beam, despite having a consistently smaller resistivity at lower temperatures than that of aluminium. The increase in magnetic field strength is responsible for the suppression of the filamentation instability. This is due to the resistive filamentation growth rate for copper and aluminium, under identical conditions, being numerically very close.