The oxygen deficiency effect of VO_2 thin films prepared by laser ablation
The oxygen deficiency effect of VO_2 thin films prepared by laser ablation
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DOI：
10.1557/jmr.1997.0061
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发表时间：
1997-02
影响因子：
2.7
通讯作者：
M. Nagashima;H. Wada
中科院分区：
文献类型：
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作者：
M. Nagashima;H. Wada
采用激光烧蚀法制备了二氧化钒薄膜(VO2)。研究了各沉积条件下的电阻率和电阻温度系数(TCR)随温度的变化规律。研究表明，通过控制沉积过程中引入的氧压作为沉积参数，可以优化室温下的TCR。结果表明，在RT下，VO_2缺氧状态下的TCR大于富氧状态下的TCR。在25℃时，在R切割蓝宝石和SiO_2/Si衬底上沉积的VO_2薄膜的TCR值分别为0.072/K和0.045/K。
Vanadium dioxide thin films (VO_2) have been deposited by laser ablation. The temperature dependence of resistivity and temperature coefficient of resistance (TCR) for each deposition condition were investigated. It was clarified that the TCR at room temperature (RT) can be optimized by controlling the oxygen pressure introduced during deposition as the deposition parameter. In the result, larger TCR’s at RT were observed for the oxygen deficient condition of VO_2 than for oxygen-richer samples. Obtained TCR values were 0.072/K and 0.045/K at 25°C for VO_2 thin films deposited onto R-cut sapphire and SiO_2/Si, respectively.