Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements
Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements
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硅中的浅施主电子。
DOI：
10.1103/physrev.184.739
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发表时间：
1969
期刊：
影响因子：
--
通讯作者：
R. L. Mieher
中科院分区：
文献类型：
--
作者：
E. B. Hale;R. L. Mieher
用电子核双共振（ENDOR）方法测量了掺砷、掺磷和掺锑硅中Si 29晶格核与基态施主电子的超精细相互作用.超精细常数报告为每个捐助者约20壳含有总共约150个晶格核。每个捐赠者大约有15个这样的炮弹是第一次报告;以前报告过5个。我们的结果显着不同的壳D和E;其他三个壳测量精度更高。实验超精细张量与其晶格位置的匹配不容易确定。一个系统的技术用于分析ENDOR光谱进行了讨论。
The hyperfine interactions of Si 29 lattice nuclei with ground-state donor electrons in arsenic-, phosphorus-, and antimony-doped silicon have been measured by electron-nuclear double resonance (ENDOR). Hyperfine constants are reported for each donor for about 20 shells containing a total of about 150 lattice nuclei. About 15 of these shells per donor are reported for the first time; five were reported previously. Our results differ significantly for shells D and E; the other three shells were measured with greater accuracy. The matching of experimental hyperfine tensors to their lattice sites cannot be readily determined. A systematic technique used to analyze the ENDOR spectra is discussed.