Resistive switching artificially induced in a dielectric/ferroelectric composite diode
Resistive switching artificially induced in a dielectric/ferroelectric composite diode
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DOI：
10.1063/1.4824214
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发表时间：
2013-10
影响因子：
4
通讯作者：
A. Tsurumaki‐Fukuchi;H. Yamada;A. Sawa
中科院分区：
文献类型：
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作者：
A. Tsurumaki‐Fukuchi;H. Yamada;A. Sawa
通过在电极/铁电界面插入薄介电层，在导电铁电电容器中人为地诱发铁电电阻切换。由半导体缺硼 Bi1−δFeO3 层和 SrRuO3 电极组成的铁电电容器没有表现出电阻切换，但当在 SrRuO3/Bi1−δFeO3 界面之一插入薄 LaFeO3 介电层时，这些铁电电容器中出现电阻切换。除了电阻开关之外，SrRuO3/LaFeO3/Bi1−δFeO3/SrRuO3 器件还表现出整流电流-电压特性，表明器件中沿堆叠方向存在不对称电势分布。结果揭示了铁电二极管的电阻开关机制，并证明界面工程提供了一种简单但有效的方法来控制铁电电阻开关特性。
Ferroelectric resistive switching was artificially induced in a conductive ferroelectric capacitor by inserting a thin dielectric layer at an electrode/ferroelectric interface. Ferroelectric capacitors consisting of semiconducting Bi-deficient Bi1−δFeO3 layers with SrRuO3 electrodes showed no resistive switching, but resistive switching emerged in these ferroelectric capacitors when a thin LaFeO3 dielectric layer was inserted at one of the SrRuO3/Bi1−δFeO3 interfaces. In addition to resistive switching, SrRuO3/LaFeO3/Bi1−δFeO3/SrRuO3 devices showed rectifying current–voltage characteristics, suggesting an asymmetric potential distribution along the stacking direction in the device. The results shed light upon the mechanism of resistive switching in ferroelectric diodes and demonstrate that interface engineering provides a simple but effective approach toward controlling the ferroelectric resistive switching characteristics.