Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion
Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion
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DOI：
10.1063/1.5115335
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发表时间：
2019-09
影响因子：
4
通讯作者：
Jinpeng Huo;G. Zou;Luchan Lin;Kehong Wang;S. Xing;Guanlei Zhao;Lei Liu;Y. Norman Zhou
中科院分区：
文献类型：
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作者：
Jinpeng Huo;G. Zou;Luchan Lin;Kehong Wang;S. Xing;Guanlei Zhao;Lei Liu;Y. Norman Zhou
在这项工作中，位置选择性硼（B）掺杂在SiC纳米线已被证明是利用聚焦飞秒（fs）激光照射。拉曼光谱和电学性能表明，在原始的n型SiC纳米线中的局部元素掺杂可以将该段转变为p型。飞秒激光辐照下纳米线中晶体缺陷和空位的形成，沿着掺杂剂分子的同时解离，可以加速掺杂过程。单SiC纳米线p-n结和场效应晶体管与一个p型段已被制造的基础上的原始的n型纳米线，显示出修改的电响应作为逻辑门编程电压信号。这种激光控制的选择性掺杂可以为纳米级半导体中的精确元素掺杂提供替代方案，这对于纳米电子单元制造是有希望的。
In this work, site-selective Boron (B) doping in SiC nanowires has been demonstrated by utilizing focused femtosecond (fs) laser irradiation. Raman spectra and electrical performance indicate that the localized element doping in pristine n-type SiC nanowires can convert the segment into p-type. The formation of crystalline defects and vacancies in nanowires under fs laser irradiation, along with the simultaneous dissociation of the dopant molecules, can accelerate the doping process. Single SiC nanowire p-n junction and field-effect transistors with a p-type segment have been fabricated based on the pristine n-type nanowire, showing a modified electrical response as a logic gate to programmed voltage signals. This laser controlled selective doping may provide an alternative for precise element doping in semiconductors at the nanoscale, which can be promising for nanoelectronic unit fabrication.