Critical analysis of self-doping and water-soluble n-type organic semiconductors: structures and mechanisms
Critical analysis of self-doping and water-soluble n-type organic semiconductors: structures and mechanisms
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DOI：
10.1039/d2tc01108e
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发表时间：
2022-05-24
影响因子：
6.4
通讯作者：
Schroeder, Bob C.
中科院分区：
文献类型：
--
作者：
Cowen, Lewis M.;Gilhooly-Finn, Peter A.;Schroeder, Bob C.
自掺杂有机半导体提供了一种有前途的途径，以避免与分子n型掺杂剂相关的不稳定性和形态问题。本文介绍了一种与氢氧化铵基团共价键合的萘四甲酸二酰亚胺（NDI）半导体的结构表征。发现掺杂剂前体是意外的碱催化水解的产物，其是可逆的。可逆水解对掺杂膜的化学组成、形貌和电子性能具有深远的影响。此外，我们还研究了季铵基团的降解机理以及NDI的后续掺杂。这些研究结果表明，在利用这类有前途的水溶性半导体时，必须考虑在薄膜加工过程中的一个以上的化学反应的产物。
Self-doping organic semiconductors provide a promising route to avoid instabilities and morphological issues associated with molecular n-type dopants. Structural characterization of a naphthalenetetracarboxylic diimide (NDI) semiconductor covalently bound to an ammonium hydroxide group is presented. The dopant precursor was found to be the product of an unexpected base catalyzed hydrolysis, which was reversible. The reversible hydrolysis had profound consequences on the chemical composition, morphology, and electronic performance of the doped films. In addition, we investigated the degradation mechanism of the quaternary ammonium group and the subsequent doping of NDI. These findings reveal that the products of more than one chemical reaction during processing of films must be considered when utilizing this promising class of water-soluble semiconductors.